Investigation of Amorphous Silicon/P3HT Heterojunction for Solar Cells
Michael Seymour and Alok C. Rastogi
The work presented here shows some of the experimental results obtained from analyzing the heterojunction between hydrogenated amorphous silicon (a-Si:H) and poly 3-hexylthiophene (P3HT). The goal of this study is to better understand the junction and ultimately use these materials in thin film hybrid solar cells. Two different structures were investigated; ITO/a-Si:H/P3HT/Cr/Ag and ITO/PEDOT/P3HT/a-Si:H/Cr/Ag. Surface morphology, EDAX, and transmission spectra were observed for the sputtered hydrogenated amorphous silicon layer. I-V characteristics were investigated using a Keithley 2602 Sourcemeter. Strong diode curves were obtained from both structures. There was little effect from a halogen light source. Further investigation of other parameters and effect from light is still on-going.